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MODIFICATION OF MXENE-BASED MATERIALS THROUGH THE INTRODUCTION OF SILICON (SIO2/SIOx/SI) BY VARIOUS METHODS: DEVELOPMENT OF SYNTHESIS TECHNIQUES AND ALTERNATIVE SURFACE MODIFICATION STRATEGIES

https://doi.org/10.53360/2788-7995-2025-3(19)-70

Abstract

MXene represents a promising class of two-dimensional carbides and nitrides of transition metals. Due to their unique combination of high electrical conductivity, large specific surface area, hydrophilicity, and tunable surface chemistry, they have attracted significant scientific interest. These properties enable the application of MXenes in energy storage systems, sensors, electrocatalysis, filtration, and environmental remediation. However, their susceptibility to oxidation and insufficient long-term stability remain major challenges for practical use.
To address these limitations, silicon-based modifications – specifically involving Si, SiO₂, and SiOx – are proposed as effective strategies for enhancing the structural stability of MXenes. This review analyzes functionalization methods employing silicon-containing components, including sol–gel synthesis, the Stöber method, chemical vapor deposition (CVD), atomic layer deposition (ALD), and sputtering techniques.
Silicon modification improves oxidation resistance, thermal stability, surface area, and compatibility with composites. These enhanced properties contribute to improved performance of silicon-modified MXenes in lithium- and aluminum-ion batteries, supercapacitors, sensors, and catalysts. Additionally, their photocatalytic activity and pollutant adsorption capabilities support applications in environmental protection technologies. The review also explores sustainable and scalable strategies for integrating MXenes into future multifunctional systems.

About the Authors

M. Alipuly
Satbayev Univeristy
Kazakhstan

Mukhtar Alipuly – doctoral student of the department «Materials science, nanotechnology and engineering physics»

050013, Republic of Kazakhstan, Almaty, 22 Satbayev street



K. Askaruly
Satbayev Univeristy
Kazakhstan

Kydyr Askaruly – PhD technical sciences, Associate professor of the department of «General physics»

050013, Republic of Kazakhstan, Almaty, 22 Satbayev street



K. Toshtay
Al-Farabi Kazakh national university
Kazakhstan

Kainaubek Toshtay – Associate Professor, Department of Physical Chemistry, Catalysis and Petrochemistry

050040, Republic of Kazakhstan, Almaty, Al-Farabi avenue, 71



N. N. Nurgaliyev
Shakarim University
Kazakhstan

Nurzhan Nurgaliyev – PhD

071410, Republic of Kazakhstan, Semey, 20А Glinka street 



S. Azat
Satbayev Univeristy
Kazakhstan

Seitkhan Azat – Professor, Head of the Laboratory of Engineering Profile

050013, Republic of Kazakhstan, Almaty, 22 Satbayev street



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Review

For citations:


Alipuly M., Askaruly K., Toshtay K., Nurgaliyev N.N., Azat S. MODIFICATION OF MXENE-BASED MATERIALS THROUGH THE INTRODUCTION OF SILICON (SIO2/SIOx/SI) BY VARIOUS METHODS: DEVELOPMENT OF SYNTHESIS TECHNIQUES AND ALTERNATIVE SURFACE MODIFICATION STRATEGIES. Bulletin of Shakarim University. Technical Sciences. 2025;(3(19)):634-646. (In Kazakh) https://doi.org/10.53360/2788-7995-2025-3(19)-70

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ISSN 2788-7995 (Print)
ISSN 3006-0524 (Online)
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